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| ADE-208-440 F (Z) HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP-8 High speed power switching 8 5 76 Features * * * * Low on-resistance Capable of 4V gate drive Low drive current High density mounting 56 7 8 DD D D 3 12 4 4 G Ordering Information ---------------------------------------- Hitachi Cord EIAJ Cord JEDEC Cord FP-8DA -- MS-012AA SSS 123 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 20 11 88 11 2.5 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** When using the glass epoxy board (FR4 40 x 40x 1.6 mm), PW 10 s HAT2022R Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.012 10 10 2.0 0.015 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 6A VGS = 10V * ID = 6A VGS = 4V * ID = 6 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 6 A VDD = 10 V ------------------------------------------------ -- 0.017 0.025 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 12 18 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1450 950 380 60 450 80 160 0.8 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 11A, VGS = 0 IF = 11A, VGS = 0 diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 70 -- ns -------------------------------------------------------------------------------------- HAT2022R Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 30 10 3 Drain Current Maximum Safe Operation Area 10 s 100 s PW DC Op er 1m = s 10 m s Channel Dissipation 2.0 (P 1 Operation in W this area is < 10 limited by R DS(on) s) 0.3 ati on ** 1.0 0.1 0.03 Ta = 25 C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) ** When using the glass epoxy board (FR4 40 x 40x 1.6 mm) 0 50 100 150 Ta (C) 200 Ambient Temperature Typical Output Characteristics 50 10V 6V I D (A) 40 5V 4.5 V 30 4V Typical Transfer Characteristics 20 V DS = 10 V Pulse Test (A) ID Drain Current 16 Pulse Test Drain Current 3.5 V 12 25C Tc = 75C -25C 4 20 3V 8 10 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) HAT2022R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 0.5 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test 0.1 0.05 0.4 Drain to Source Voltage 0.3 0.02 0.01 VGS = 4 V 10 V 0.2 I D = 10 A 0.1 5A 2A 2 4 6 Gate to Source Voltage 8 10 V GS (V) 0.005 0.002 0 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) ( ) 0.05 Pulse Test 0.04 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 50 Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = -25 C 25 C 0.03 I D = 2 A, 5 A, 10 A V GS = 4 V 2 A, 5 A, 10 A 75 C 2 1 0.5 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 0.02 0.01 10 V 0 40 80 120 160 Case Temperature Tc (C) 0 -40 HAT2022R 500 Reverse Recovery Time trr (ns) 200 100 50 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss 1000 300 100 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Coss Crss 20 10 5 0.2 di/dt = 20 A/s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) Capacitance C (pF) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 11 A V DD = 5 V 10 V 25 V V DS V GS 8 V GS (V) 50 20 1000 500 Switching Time t (ns) Switching Characteristics 40 16 tr 200 100 50 tf t d(off) t d(on) Drain to Source Voltage 30 12 20 10 V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 Gate to Source Voltage 20 10 0.2 V GS = 4 V, V DD = 10 V PW = 3 s, duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20 0 HAT2022R Reverse Drain Current vs. Souece to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 5V V GS = 0, -5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions * SOP-8 5.0 Max 8 5 Unit : mm 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi Code FP-8DA -- EIAJ MS-012AA JEDEC |
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